DocumentCode
1833314
Title
Synthesis of RF CMOS Low Noise Amplifiers
Author
Tulunay, Gulin ; Balkir, Sina
Author_Institution
Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE
fYear
2008
fDate
18-21 May 2008
Firstpage
880
Lastpage
883
Abstract
A stand-alone design automation tool tailored for RF CMOS LNA design is presented. Rather than relying on commercially available circuit simulators such as Spectre or Hspice, the presented synthesis tool is self-contained with its own built-in modules for faster performance evaluation. Silicon- verified RF device models are incorporated into the synthesis procedure for accurate parasitic modeling. To validate the proposed approach, an LNA circuit operating at 900 MHz is synthesized and fabricated in a 0.25 mum CMOS technology. Measurement results are presented which shows the viability of the proposed synthesis tool.
Keywords
CMOS integrated circuits; elemental semiconductors; low noise amplifiers; radiofrequency amplifiers; silicon; LNA circuit; RF CMOS low noise amplifier; frequency 900 MHz; silicon-verified RF device model; size 0.25 micron; Admittance; Circuit simulation; Circuit synthesis; Circuit topology; Cost function; Foundries; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541559
Filename
4541559
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