• DocumentCode
    1833314
  • Title

    Synthesis of RF CMOS Low Noise Amplifiers

  • Author

    Tulunay, Gulin ; Balkir, Sina

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    880
  • Lastpage
    883
  • Abstract
    A stand-alone design automation tool tailored for RF CMOS LNA design is presented. Rather than relying on commercially available circuit simulators such as Spectre or Hspice, the presented synthesis tool is self-contained with its own built-in modules for faster performance evaluation. Silicon- verified RF device models are incorporated into the synthesis procedure for accurate parasitic modeling. To validate the proposed approach, an LNA circuit operating at 900 MHz is synthesized and fabricated in a 0.25 mum CMOS technology. Measurement results are presented which shows the viability of the proposed synthesis tool.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; low noise amplifiers; radiofrequency amplifiers; silicon; LNA circuit; RF CMOS low noise amplifier; frequency 900 MHz; silicon-verified RF device model; size 0.25 micron; Admittance; Circuit simulation; Circuit synthesis; Circuit topology; Cost function; Foundries; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541559
  • Filename
    4541559