DocumentCode :
1833314
Title :
Synthesis of RF CMOS Low Noise Amplifiers
Author :
Tulunay, Gulin ; Balkir, Sina
Author_Institution :
Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
880
Lastpage :
883
Abstract :
A stand-alone design automation tool tailored for RF CMOS LNA design is presented. Rather than relying on commercially available circuit simulators such as Spectre or Hspice, the presented synthesis tool is self-contained with its own built-in modules for faster performance evaluation. Silicon- verified RF device models are incorporated into the synthesis procedure for accurate parasitic modeling. To validate the proposed approach, an LNA circuit operating at 900 MHz is synthesized and fabricated in a 0.25 mum CMOS technology. Measurement results are presented which shows the viability of the proposed synthesis tool.
Keywords :
CMOS integrated circuits; elemental semiconductors; low noise amplifiers; radiofrequency amplifiers; silicon; LNA circuit; RF CMOS low noise amplifier; frequency 900 MHz; silicon-verified RF device model; size 0.25 micron; Admittance; Circuit simulation; Circuit synthesis; Circuit topology; Cost function; Foundries; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541559
Filename :
4541559
Link To Document :
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