Title :
A method for improving the adhesion of PE-CVD SiO2 to CycloteneTM 5021 polymeric interlayer dielectric
Author :
Shaffer, Edward O., II ; Mills, Michael E. ; Hawn, David D. ; Liu, Joyce C. ; Hummel, John P.
Author_Institution :
Dow Chem. Co., Midland, MI, USA
Abstract :
Successful integration of a polymer as an interlayer dielectric requires mechanical reliability to be maintained through all back-end of line (BEOL) processes. In this paper we use an integration demonstration of PE-CVD SiO2 with CycloteneTM 5021 (BCB). Blistering after high temperature thermal annealing was mitigated by improvement of the adhesion strength of the deposited oxide film. This was successful when the BCB layer was treated with N2 plasma. Fracture mechanics combined with surface analysis is used to understand the mechanism of improved mechanical reliability
Keywords :
adhesion; annealing; dielectric thin films; fracture mechanics; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; plasma CVD; plasma materials processing; polymer films; silicon compounds; surface treatment; BCB layer; Cyclotene 5021 polymeric interlayer dielectric; N2; N2 plasma treatment; PE-CVD SiO2; SiO2; adhesion; adhesion strength; back-end of line processes; blistering; deposited oxide film; fracture mechanics; high temperature thermal annealing; mechanical reliability; polymer interlayer dielectric integration; surface analysis; Adhesives; Annealing; Coatings; Compressive stress; Dielectrics; Nonhomogeneous media; Plasma temperature; Polymers; Silicon; Thermal stresses;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704905
