DocumentCode :
1833395
Title :
Relevant parameters of SPICE3 MOSFET model for EMC analysis
Author :
Ben Hadj Slama, Jaleleddine ; Hrigua, Slim ; Costa, François ; Revol, Bertrand ; Gautier, Cyrille
Author_Institution :
LSE, Nat. Inst. of Appl. Sci. & Technol., Tunis, Tunisia
fYear :
2009
fDate :
17-21 Aug. 2009
Firstpage :
319
Lastpage :
323
Abstract :
Design of static converters circuits and virtual prototyping of power electronics systems requires the use of heavy semiconductors components models, with a large number of parameters whose exact knowledge often requires several delicate experimental measurements and heavy optimisations procedures. This paper presents a sensitivity survey that permits to determine which parameters of the SPICE3 MOSFET model are applicable for the EMC analysis with the goal to reduce the number of measurements to carry out at the phase of parameters extraction.
Keywords :
MOSFET; SPICE; convertors; electromagnetic compatibility; power electronics; semiconductor device models; EMC analysis; SPICE3 MOSFET model; parameters extraction; power electronics system; semiconductors component model; static converter circuits design; virtual prototyping; Design optimization; Electromagnetic compatibility; MOSFET circuits; Parameter extraction; Phase measurement; Power electronics; Power measurement; Power system modeling; Static power converters; Virtual prototyping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 2009. EMC 2009. IEEE International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-4266-9
Electronic_ISBN :
978-1-4244-4058-0
Type :
conf
DOI :
10.1109/ISEMC.2009.5284615
Filename :
5284615
Link To Document :
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