• DocumentCode
    1833594
  • Title

    "GaAs RF Wafer Qualification using RF Probes"

  • Author

    Mitchell, Bill H. ; Davis, WAlan ; Boggan, Garry

  • Author_Institution
    Texas Instruments Inc., Dallas, Tx.
  • Volume
    12
  • fYear
    1987
  • fDate
    Dec. 1987
  • Firstpage
    41
  • Lastpage
    53
  • Abstract
    Processing of Gallium Arsenide MMIC´s is expensive due in part to the time required to RF-qualify wafers. Manufacturers who intend to compete in this relatively new market must reduce device costs. To reduce a MMIC´s cost a major emphasis should be on early detection and discontinuation of wafers which will not yield devices meeting the MMIC´s expected RF performance. On-wafer RF qualification can be established as a technique to achieve this goal.
  • Keywords
    Circuit testing; Coplanar transmission lines; Costs; FETs; Gallium arsenide; MESFETs; MMICs; Probes; Qualifications; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Winter, 30th
  • Conference_Location
    Dallas, TX, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1987.323882
  • Filename
    4119442