Title :
Single-chip 20-GHz VCO and frequency divider in SiGe technology
Author :
Ettinger, K. ; Stelzer, A. ; Diskus, C.G. ; Thomann, W. ; Fenk, J. ; Weigel, R.
Author_Institution :
Inst. for Commun. & Inf. Eng., Linz Univ., Austria
Abstract :
This paper presents the design, implementation and testing of a fully integrated 20 GHz voltage controlled oscillator, a frequency divider with a divide ratio of 16, as well as an output driver. All blocks are integrated on one IC with an area of 890 /spl times/ 890 /spl mu/m/sup 2/ and are fabricated in a production SiGe bipolar technology. The VCO is a varactor-tuned LC-type oscillator with a tuning range of 600 MHz. The differential signal of the output driver is converted to a single-ended signal by an external microstrip balun and delivers a maximum of 2 dBm of output power into a 50 /spl Omega/ load. The chip works with a single supply voltage of 3.6 V, the VCO draws 12 mA of supply current, divider and output driver consume 17 mA and 51 mA, respectively. The measured phase-noise of the VCO is -85 dBc/Hz at 1 MHz offset frequency.
Keywords :
Ge-Si alloys; MMIC oscillators; baluns; bipolar MMIC; bipolar analogue integrated circuits; circuit tuning; frequency dividers; phase noise; radar transmitters; semiconductor materials; voltage-controlled oscillators; 12 mA; 17 mA; 20 GHz; 3.6 V; 51 mA; SiGe; VCO; differential signal; divide ratio; external microstrip balun; frequency divider; offset frequency; output driver; output power; phase-noise; radar transmitter; supply voltage; tuning range; varactor-tuned LC-type oscillator; Bipolar integrated circuits; Frequency conversion; Germanium silicon alloys; Impedance matching; Microstrip; Production; Silicon germanium; Testing; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011760