Title :
An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices
Author :
Tomblad, O. ; Blair, C.
Author_Institution :
Ericsson Inc. Microelectron., Morgan Hill, CA, USA
Abstract :
An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices has been developed. The physically-based model was carefully calibrated to pulsed current/voltage characteristics and bias-dependent capacitance measurements. Internal matching networks and influence from the package were included in a physical way. The implemented electrothermal coupling exhibited good numerical stability during large-signal operation and the model correlates well to measurements of RF functional characteristics.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; RF functional characteristics; RF power LDMOS devices; bias-dependent capacitance measurements; electrothermal BSIM3 model; electrothermal coupling; large-signal operation; numerical stability; physically-based model; pulsed current/voltage characteristics; Calibration; Electrothermal effects; Packaging; Power amplifiers; Power system modeling; Pulse amplifiers; Pulse measurements; Radio frequency; Resistors; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011766
