An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices

Author

Tomblad, O. ; Blair, C.

Author_Institution

Ericsson Inc. Microelectron., Morgan Hill, CA, USA

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

861

Abstract

An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices has been developed. The physically-based model was carefully calibrated to pulsed current/voltage characteristics and bias-dependent capacitance measurements. Internal matching networks and influence from the package were included in a physical way. The implemented electrothermal coupling exhibited good numerical stability during large-signal operation and the model correlates well to measurements of RF functional characteristics.

Keywords

UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; RF functional characteristics; RF power LDMOS devices; bias-dependent capacitance measurements; electrothermal BSIM3 model; electrothermal coupling; large-signal operation; numerical stability; physically-based model; pulsed current/voltage characteristics; Calibration; Electrothermal effects; Packaging; Power amplifiers; Power system modeling; Pulse amplifiers; Pulse measurements; Radio frequency; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011766

Filename

1011766