DocumentCode :
1833989
Title :
Edge effects in pixelated CdZnTe gamma detectors
Author :
Shor, Asher ; Eisen, Yossi ; Mardor, Israel
Author_Institution :
Soreq Nucl. Res. Center, Yavne´´el, Israel
Volume :
5
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
3342
Abstract :
Edge effects in pixelated CdZnTe detectors are a result of the high dielectric constant of the CdZnTe detector material, and the tendency of the field lines emanating from the "hole" charge carriers to remain within the detector volume. As a result spectra for edge and corner pixels tend to exhibit a longer low energy tail at the expense of the number of events in the photo-peak. We focus on a thick pixelated CdZnTe detector, where, the detector thickness is comparable to the lateral size. We develop a theoretical Monte-Carlo simulation that well describes the experimentally observed edge effects. We show that when the same detector is embedded in an array of similar detector at the same HV, the edge effects disappear, and the spectral properties of even the central pixels improve noticeably.
Keywords :
Monte Carlo methods; gamma-ray detection; permittivity; position sensitive particle detectors; semiconductor counters; HV potential; Monte-Carlo simulation; central pixels; corner pixel spectra; detector array; detector thickness; detector volume; edge effects; edge pixel spectra; field lines; high dielectric constant; hole charge carriers; lateral detector size; low energy tail; photopeak; pixelated CdZnTe gamma detectors; spectral properties; Charge carriers; Dielectric materials; Electrodes; Gamma ray detection; Gamma ray detectors; High-K gate dielectrics; Sensor arrays; Signal processing; Tail; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352622
Filename :
1352622
Link To Document :
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