Title :
A 6 watt LDMOS broadband high efficiency distributed power amplifier fabricated using LTCC technology
Author :
Lei Zhao ; Pavio, A. ; Stengel, B. ; Thompson, B.
Author_Institution :
Solid State Res. Center, Motorola Inc., Tempe, AZ, USA
Abstract :
A novel new approach in designing high efficiency power distributed amplifiers for broadband wireless applications has been developed. This synthesis technique allows the designer to achieve power added efficiencies, during class B operation, greater than 50% while still preserving the low VSWR and broadband characteristics of distributed structures. The performance of these newly designed amplifiers can yield the same PAE and power output performance of narrow band, single-ended, reactively matched amplifiers, without the high sensitivity to manufacturing variations. This synthesis technique has been applied to develop LDMOS and PHEMT distributed power amplifiers for cellular base stations and portable communication applications.
Keywords :
UHF integrated circuits; UHF power amplifiers; ceramic packaging; distributed amplifiers; hybrid integrated circuits; power HEMT; power MOSFET; wideband amplifiers; 6 W; LDMOS broadband distributed power amplifiers; LTCC technology fabrication; PAE; PHEMT distributed power amplifiers; broadband wireless applications; cellular base stations; class B operation; distributed structures; low VSWR characteristics; low temperature co-fired ceramic technology; manufacturing variation sensitivity; narrow band single ended reactively matched amplifiers; portable communication applications; power added efficiency; power output performance; synthesis techniques; Bandwidth; Broadband amplifiers; Circuits; Distributed amplifiers; High power amplifiers; Impedance; Power amplifiers; Power transmission lines; Radiofrequency amplifiers; Transmission line theory;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011774
