DocumentCode
1834114
Title
High efficiency wideband 6 to 18 GHz PHEMT power amplifier MMIC
Author
Komiak, J.J. ; Wendell Kong ; Nichols, K.
Author_Institution
Warfare Syst., BAE Syst., Nashua, NH, USA
Volume
2
fYear
2002
fDate
2-7 June 2002
Firstpage
905
Abstract
Design and performance of a power amplifier that has established new benchmarks for 6 to 18 GHz power is reported. The amplifier achieved 7.5 Watts max, 5.4 Watts average, 4 Watts min with 36 % max, 22 % average PAE and 12 dB of power gain from 6 to 18 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results. The amplifier is implemented in a fully selective 0.15 um double recess power PHEMT process.
Keywords
HEMT integrated circuits; MMIC power amplifiers; wideband amplifiers; 0.15 micron; 12 dB; 22 to 36 percent; 6 to 18 GHz; 7.5 to 4 W; bandwidth; output power; power gain; power-added efficiency; wideband PHEMT power amplifier MMIC; Broadband amplifiers; Electronic warfare; High power amplifiers; MIM capacitors; MMICs; Multichip modules; PHEMTs; Phased arrays; Power amplifiers; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011776
Filename
1011776
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