• DocumentCode
    1834182
  • Title

    AC performance of optically controlled MOSFET

  • Author

    Jain, Prerana ; Mishra, B.K. ; Phade, Gayatri

  • Author_Institution
    SKVM´´s NMIMS, Mumbai, India
  • fYear
    2012
  • fDate
    1-2 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Advances in CMOS technology have made MOSFET a serious contender at RF. High frequency performance of the device is characterized by transit frequency ft, maximum frequency of oscillation fmax, minimum noise figure NFmin. This paper presents above figures of merits for optically controlled Silicon N-MOSFET, illuminated by optical source of photon energy greater than bandgap of Silicon. The figures of merit show improvement as compared to dark condition, indicating application of device as potential candidate in optoelectronic applications.
  • Keywords
    CMOS integrated circuits; MOSFET; integrated optoelectronics; AC performance; CMOS technology; high frequency performance; maximum frequency of oscillation; minimum noise figure; optical source; optically controlled MOSFET; optically controlled silicon N-MOSFET; optoelectronic applications; photon energy; transit frequency; Gain; Lighting; Logic gates; MOSFET circuits; Noise; Noise figure; Radio frequency; MOSFET; Modelling; Optoelectronics; Photodetector; RF;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical, Electronics and Computer Science (SCEECS), 2012 IEEE Students' Conference on
  • Conference_Location
    Bhopal
  • Print_ISBN
    978-1-4673-1516-6
  • Type

    conf

  • DOI
    10.1109/SCEECS.2012.6184825
  • Filename
    6184825
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1834182