Title :
AC performance of optically controlled MOSFET
Author :
Jain, Prerana ; Mishra, B.K. ; Phade, Gayatri
Author_Institution :
SKVM´´s NMIMS, Mumbai, India
Abstract :
Advances in CMOS technology have made MOSFET a serious contender at RF. High frequency performance of the device is characterized by transit frequency ft, maximum frequency of oscillation fmax, minimum noise figure NFmin. This paper presents above figures of merits for optically controlled Silicon N-MOSFET, illuminated by optical source of photon energy greater than bandgap of Silicon. The figures of merit show improvement as compared to dark condition, indicating application of device as potential candidate in optoelectronic applications.
Keywords :
CMOS integrated circuits; MOSFET; integrated optoelectronics; AC performance; CMOS technology; high frequency performance; maximum frequency of oscillation; minimum noise figure; optical source; optically controlled MOSFET; optically controlled silicon N-MOSFET; optoelectronic applications; photon energy; transit frequency; Gain; Lighting; Logic gates; MOSFET circuits; Noise; Noise figure; Radio frequency; MOSFET; Modelling; Optoelectronics; Photodetector; RF;
Conference_Titel :
Electrical, Electronics and Computer Science (SCEECS), 2012 IEEE Students' Conference on
Conference_Location :
Bhopal
Print_ISBN :
978-1-4673-1516-6
DOI :
10.1109/SCEECS.2012.6184825
