Title :
W-band InP/InGaAs/InP DHBT MMIC power amplifiers
Author :
Yun Wei ; Sangmin Lee ; Sundararajan, K. ; Dahlstrom, M. ; Urteaga, M. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report W-band MMIC class A power amplifiers in InP/InGaAs/InP DHBT transferred-substrate technology. A cascode amplifier with 64 /spl mu/m/sup 2/ emitter area exhibits a peak small-signal gain of 10 dB at 90 GHz and an output power of 9.5 dBm under 1 dB gain compression. An 8.5-dB-gain common-base amplifier with an emitter area of 128 /spl mu/m/sup 2/ delivers 14 dBm output power at 85 GHz under 1 dB gain compression and 16.2 dBm (42 mW) saturated output power with an associated 4.6 dB gain. To our knowledge, this is highest reported output power for a W-band HBT power amplifier.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; semiconductor device breakdown; 1 dB gain compression; 10 dB; 4.6 dB; 42 mW; 85 GHz; 90 GHz; InP-InGaAs-InP; InP/InGaAs/InP DHBT transferred-substrate technology; W-band HBT power amplifier; W-band InP/InGaAs/InP DHBT MMIC power amplifiers; W-band MMIC class A power amplifiers; cascode amplifier; common-base amplifier; emitter area; high breakdown voltages; output power; peak small-signal gain; saturated output power; Circuits; DH-HEMTs; Fingers; Gain; Indium gallium arsenide; Indium phosphide; MMICs; Power amplifiers; Power generation; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011779
