Simulation of CdTe:Ge crystal properties for nuclear radiation detectors

Author

Sochinskii, N.V. ; Lozano, M. ; Pellegrini, G.. ; Ullan, M.

Author_Institution

Instituto de Microelectronica de Madrid, Spain

Volume

5

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

3390

Abstract

We report on the electrical simulation results for the coplanar detector made from a Ge-doped CdTe crystal. The simulations have been performed using the commercial modeling package MEDICI. The detailed models of material behavior have been created by changing the concentration of three standard traps associated with CdTe:Ge material. These traps are the A-center, a vacancy defect related to Te and the Ge impurity. Their energetic positions were measured by photoluminescence technique. The simulation has revealed the effects of the traps on several detector characteristics, in particular the leakage current and electric field distribution.

Keywords

A-centres; II-VI semiconductors; defect states; electron traps; hole traps; impurity states; leakage currents; photoluminescence; physics computing; semiconductor counters; vacancies (crystal); A-center; CdTe:Ge; Ge impurity; Te impurity; commercial modeling package MEDICI; coplanar detector; crystal properties simulation; electric field distribution; electrical simulation; energetic positions; leakage current; material behavior; nuclear radiation detectors; photoluminescence; vacancy defect; Crystalline materials; Energy measurement; Impurities; Leak detection; Medical simulation; Packaging; Photoluminescence; Position measurement; Radiation detectors; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352632

Filename

1352632