Title :
Development of Cu etch process for advanced Cu interconnects
Author :
Ye, Yan ; Ma, Diana ; Zhao, Allen ; Hsieh, Peter ; Tu, Wayne ; Deng, Xiancan ; Chu, Gary ; Mu, Chun ; Chow, Jenn ; Moon, Peter ; Sherman, Steve
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on etch performance for features down to 0.25 μm with aspect ratios greater than 2:1. Copper etch rates greater than 5000 □/min have been achieved, and corrosion-free post Cu etch performance has been demonstrated for periods in excess of 72 hours. Electrical tests were conducted and are presented in detail
Keywords :
ULSI; copper; corrosion; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; 0.25 micron; 72 hr; Cu; Cu etch process; Cu etch rates; Cu interconnects; ULSI; copper etch processing; corrosion-free post Cu etch performance; electrical tests; etch performance; feature aspect ratios; feature size; Aluminum; Chemicals; Copper; Corrosion; Etching; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Testing;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704909
