Title :
Characterization of high resistivity poly-CdZnTe thick films grown by thermal evaporation method
Author :
Kirn, K.H. ; Na, Y.H. ; Park, Y.J. ; Jung, T.R. ; Kirn, S.U.
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
Abstract :
The high resistivity polycrystalline CdZnTe thick films are grown by thermal evaporation method. The electrical properties of polycrystalline CdZnTe having high resistivity was investigated using time of flight technique. We have measured the average drift mobility and mobility-lifetime of polycrystalline CdZnTe. In the comparison of annealed samples at different conditions, the variation of resistivity in the polycrystalline CdZnTe is considered to be related to the fluctuation of carrier concentration. From the analysis of transient photocurrent of TOF based on multiple trapping model, We have found that the two dominant localized states related to the Cd vacancy (EV + 0.36 eV) and grain boundary defects (EV + 0.75 eV) play a dominant role in increasing resistivity through compensation process.
Keywords :
II-VI semiconductors; carrier density; carrier mobility; compensation; deep level transient spectroscopy; electrical resistivity; fluctuations; grain boundaries; localised states; semiconductor counters; semiconductor thin films; time of flight spectra; vacancies (crystal); vacuum deposition; Cd vacancy; CdZnTe; annealed samples; average drift mobility; compensation process; dominant localized states; fluctuation of carrier concentration; grain boundary defects; high resistivity polycrystalline CdZnTe thick films; mobility lifetime; multiple trapping model; resistivity variation; thermal evaporation method; time of flight technique; transient photocurrent; Annealing; Conductivity; Leak detection; Leakage current; Optical materials; Thermal resistance; Thick films; Transient analysis; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352636
