DocumentCode :
1834423
Title :
Multielemental segregation coefficient of thallium bromide impurities from inductively coupled plasma mass spectroscopy measurements
Author :
Mesquita, Carlos H. ; Oliveira, Icimone B. ; Chubaci, José F D ; Hamada, Margarida M.
Volume :
5
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
3431
Abstract :
Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap, being a very promising material to be used as room temperature radiation detectors. The commercial TlBr powder is used for growing crystals for detector applications. To reduce impurities, this material is purified by the zone refining technique. In this work the trace impurities at ppm level were analyzed using ICP-MS, before and after zone refining. The efficiency of the purification was analyzed theoretically from the experimental data of the segregation coefficient estimated. Three impurities were described in this work: lithium (k=0.381), barium (k=0.699) and chromium (k=0.546).
Keywords :
X-ray detection; gamma-ray detection; impurities; mass spectra; segregation; semiconductor counters; zone refining; commercial TlBr powder; compound semiconductor; high atomic number; inductively coupled plasma mass spectroscopy; multielemental segregation coefficient; ppm level; room temperature radiation detectors; thalium bromide impurities; trace impurities; wide band gap; zone refining technique; Atomic measurements; Crystalline materials; Mass spectroscopy; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Semiconductor impurities; Semiconductor materials; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352650
Filename :
1352650
Link To Document :
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