A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair

Author

Kim, Jongsik ; Han, Sangwon ; Kim, Tae Wook ; Kim, Bo-Eun ; Shin, Hyunchol

Author_Institution

High-Speed Integrated Circuits & Syst. Lab., Kwangwoon Univ., Seoul

fYear

2008

fDate

3-5 Nov. 2008

Firstpage

445

Lastpage

448

Abstract

A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g₃ of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. Realized in 0.18-mum CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P_1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7 ~ 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.

Keywords

CMOS integrated circuits; differential amplifiers; field effect transistors; CMOS; frequency 2.4 GHz; gain 9.8 dB; resistive degenerated differential amplifier; size 0.18 mum; source coupled auxiliary FET pair; Bonding; Differential amplifiers; FETs; Feedback; Inductance; Inductors; Linearity; Radio frequency; Radiofrequency amplifiers; Roentgenium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian

Conference_Location

Fukuoka

Print_ISBN

978-1-4244-2604-1

Electronic_ISBN

978-1-4244-2605-8

Type

conf

DOI

10.1109/ASSCC.2008.4708823

Filename

4708823