Title :
A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair
Author :
Kim, Jongsik ; Han, Sangwon ; Kim, Tae Wook ; Kim, Bo-Eun ; Shin, Hyunchol
Author_Institution :
High-Speed Integrated Circuits & Syst. Lab., Kwangwoon Univ., Seoul
Abstract :
A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g3 of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. Realized in 0.18-mum CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7 ~ 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.
Keywords :
CMOS integrated circuits; differential amplifiers; field effect transistors; CMOS; frequency 2.4 GHz; gain 9.8 dB; resistive degenerated differential amplifier; size 0.18 mum; source coupled auxiliary FET pair; Bonding; Differential amplifiers; FETs; Feedback; Inductance; Inductors; Linearity; Radio frequency; Radiofrequency amplifiers; Roentgenium;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708823
