Title :
SiGe HBT quadrature VCO utilizing trifilar transformers
Author :
Syu, Jin-Siang ; Meng, Chinchun ; Huang, Guo-Wei
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
A trifilar-coupling quadrature voltage-controlled oscillator (QVCO) is demonstrated using 0.35-mum SiGe heterojunction bipolar transistor (HBT) technology. The trifilar transformer consisting of one primary coil and two secondary coils is used in this work to separate the collector and base bias for output voltage swing optimization and also to replace a conventional transistor-coupling method for quadrature output generation, simultaneously. As a result, the trifilar-coupling QVCO achieves the 191.6-dBc/Hz FOM at the supply voltage of 1.2 V The on-chip passive single side-band (SSB) upconversion mixer is also demonstrated to fairly measure the quadrature accuracy of the QVCO. Consequently, the side-band rejection ratio of 37.7 dB is achieved.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; mixers (circuits); oscillators; semiconductor materials; transformers; SiGe; base bias; collector bias; heterojunction bipolar transistor technology; on-chip passive single side-band upconversion mixer; output voltage swing optimization; side-band rejection ratio; transistor-coupling method; trifilar transformer; trifllar-coupling quadrature voltage-controlled oscillator; voltage 1.2 V; Coils; Coupling circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Mutual coupling; Silicon germanium; Topology; Transformers; Voltage-controlled oscillators; SiGe heterojunction bipolar transistor (HBT); phase noise; trifilar transformer; voltage controlled oscillator (VCO);
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708828
