DocumentCode
1834584
Title
Full wave analysis of isolated pockets to improve isolation performances in silicon based technology
Author
Bajon, D. ; Wane, S. ; Baudrand, H. ; Gamand, P.
Author_Institution
SUPAERO, Toulouse, France
Volume
2
fYear
2002
fDate
2-7 June 2002
Firstpage
987
Abstract
This paper presents a versatile full wave analysis tool in which isolation pockets in IC´s are readily introduced to perform intensive EM simulation including efficient introduction of via interconnects through metal levels. The obtained results are favorably compared to recent experimental published results.
Keywords
CMOS integrated circuits; circuit simulation; integrated circuit interconnections; integrated circuit modelling; isolation technology; mixed analogue-digital integrated circuits; CMOS integrated circuits; EM simulation; full wave analysis; insertion parameter; isolation performance; isolation pockets; metal levels; mixed signal IC; pad to pad isolation; spatial domain model; transmission parameter; via interconnects; Coupling circuits; Integral equations; Integrated circuit interconnections; Isolation technology; Performance analysis; Printed circuits; Semiconductor device modeling; Silicon; Substrates; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011795
Filename
1011795
Link To Document