Novel technique for determining bias, temperature and frequency dependence of FET characteristics

Author

Parker, A.E. ; Rathmell, J.G.

Author_Institution

Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

993

Abstract

A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is possible to predict biases, temperatures and frequencies that dispersion will or will not affect. It is interesting to note that, for some devices, dispersion effects can be seen to exist at microwave frequencies and may therefore contribute to intermodulation distortion.

Keywords

Schottky gate field effect transistors; dispersion (wave); gain measurement; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device measurement; 1 Hz to 10 GHz; FET dynamics; HEMT characteristics; MESFET characteristics; bias dependence; dc measurements; dispersion effects; frequency dependence; intermodulation distortion; intrinsic gain; large-signal pulse measurements; microwave frequencies; operating regions; small-signal RF measurements; temperature dependence; Dispersion; FETs; Frequency dependence; Frequency measurement; HEMTs; MESFETs; Pulse measurements; Radio frequency; Temperature dependence; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011796

Filename

1011796