Title :
Towards a unified method to implement transit-time effects in Pi-topology HBT compact models
Author :
Rudolph, M. ; Lenk, F. ; Doerner, Ralf ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
Four different approaches to include transit-time effects into /spl Pi/-topology HBT equivalent circuits are investigated in order to assess their compatibility with the physics-based T topology. The aim is to find an implementation that not only yields an exact model but also has a unique set of parameters in both the /spl Pi/ and T cases. This is of prime importance for reliable parameter extraction and thus the physical significance of the model. It is achieved using a transcapacitance approach. The theoretical considerations are supported by a practical example comparing measured and modeled HBT behaviour.
Keywords :
S-parameters; heterojunction bipolar transistors; microwave bipolar transistors; network topology; parameter estimation; semiconductor device models; /spl Pi/-topology HBT equivalent circuits; /spl Pi/-topology large-signal models; GaInP-GaAs; GaInP/GaAs HBT; MMIC technology; S-parameters; exact model; physics-based T topology; reliable parameter extraction; transcapacitance approach; transit-time effects; Circuit topology; Data mining; Equivalent circuits; Frequency; Heterojunction bipolar transistors; MMICs; Parameter extraction; Reliability theory; Switches; Time measurement;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011797