Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals

Author

Fiederle, M. ; Fauler, A. ; Konrath, J. ; Babentsov, V. ; Franc, J. ; James, R.B.

Author_Institution

Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ., Freiberg, Germany

Volume

5

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

3478

Abstract

CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In and Ge were grown. The crystals showed resistivities up to 10⁹ Ωcm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor the mobility-lifetime product of electrons were 2 × 10^-5 cm/V and 4 × 10^-4 cm²/V for Ge and Sn doped, respectively. The highest values was obtained for In doped (Cd,Zn)Te with 3.3 × 10^-3 cm²/V.

Keywords

II-VI semiconductors; cadmium compounds; carrier lifetime; carrier mobility; crystal growth; electrical resistivity; semiconductor counters; (Cd,Zn)Te detector crystal; CdTe detector crystal; CdTe:Ge; CdTe:In; CdTe:Sn; CdZnTe:Ge; CdZnTe:In; CdZnTe:Sn; Ge; In; Sn; compensation mechanism; doped high resistivity crystal; mobility-lifetime product; transport properties; undoped high resistivity crystal; Conductivity; Crystalline materials; Crystals; Detectors; Doping; III-V semiconductor materials; Mechanical factors; Semiconductor process modeling; Tellurium; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352661

Filename

1352661