DocumentCode :
1834637
Title :
Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals
Author :
Fiederle, M. ; Fauler, A. ; Konrath, J. ; Babentsov, V. ; Franc, J. ; James, R.B.
Author_Institution :
Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ., Freiberg, Germany
Volume :
5
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
3478
Abstract :
CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In and Ge were grown. The crystals showed resistivities up to 109 Ωcm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor the mobility-lifetime product of electrons were 2 × 10-5 cm/V and 4 × 10-4 cm2/V for Ge and Sn doped, respectively. The highest values was obtained for In doped (Cd,Zn)Te with 3.3 × 10-3 cm2/V.
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; carrier mobility; crystal growth; electrical resistivity; semiconductor counters; (Cd,Zn)Te detector crystal; CdTe detector crystal; CdTe:Ge; CdTe:In; CdTe:Sn; CdZnTe:Ge; CdZnTe:In; CdZnTe:Sn; Ge; In; Sn; compensation mechanism; doped high resistivity crystal; mobility-lifetime product; transport properties; undoped high resistivity crystal; Conductivity; Crystalline materials; Crystals; Detectors; Doping; III-V semiconductor materials; Mechanical factors; Semiconductor process modeling; Tellurium; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352661
Filename :
1352661
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1834637
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