Title :
Defect structure of high resistive CdTe: in prepared by vertical gradient freeze method
Author :
Franc, J. ; Babentsov, V. ; Fiederle, M. ; Belas, E. ; Benz, K.W. ; Hoschl, Pavel
Author_Institution :
Inst. of Phys., Charles Univ., Prague, Czech Republic
Abstract :
High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by vertical gradient freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its competes) is discussed.
Keywords :
II-VI semiconductors; X-ray detection; crystal defects; gamma-ray detection; semiconductor counters; CdTe:In; X-ray detector; energy level model; gamma-ray detector; high resistive CdTe defect structure; native defects; optical mapping method; photoelectrical mapping method; photosensitive CdTe; recombination processes; vertical gradient freeze method; Chemicals; Conductivity; Crystals; Electrons; Gamma ray detectors; Impurities; Indium; Photoconductivity; Photoluminescence; Physics;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352662
