Title :
SiP2.0: What, when, and how?
Author :
Tadahiro Kuroda ; Masayuki Mizuno ; Ramchan Woo ; Nobukazu Kondo ; Yukihiro Urakawa ; Masayuki Miyamoto ; Koyu Asai ; Shintaro Yamamichi ; Jae Dong Kim
Author_Institution :
Keio Univ., Japan
Abstract :
Up to now, SiP integration is widely used to increase chip integration density as well as flexibility of combination in heterogeneous devices. Emerging integration and stacking technologies such as 3D integration, TSV (Through Silicon Via), die-to-die proximity communications, EAD (Embedded Active Devices) are becoming greater attention. If we call the first generation SiP integration as “SiP1.0”, what is “SiP2.0” ? When and how is it practical? Each panelists will give their anticipation of future SiP, or “SiP2.0”. This panel talk is not an “A vs. B” type of debate, but more like an evening talk where each panelist presents their visions on the next generation SiP.
Keywords :
Chip scale packaging; Circuits; National electric code; Radio frequency; Silicon; Stacking; Through-silicon vias;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka, Japan
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708832