DocumentCode
1834695
Title
SiP2.0: What, when, and how?
Author
Tadahiro Kuroda ; Masayuki Mizuno ; Ramchan Woo ; Nobukazu Kondo ; Yukihiro Urakawa ; Masayuki Miyamoto ; Koyu Asai ; Shintaro Yamamichi ; Jae Dong Kim
Author_Institution
Keio Univ., Japan
fYear
2008
fDate
3-5 Nov. 2008
Firstpage
485
Lastpage
485
Abstract
Up to now, SiP integration is widely used to increase chip integration density as well as flexibility of combination in heterogeneous devices. Emerging integration and stacking technologies such as 3D integration, TSV (Through Silicon Via), die-to-die proximity communications, EAD (Embedded Active Devices) are becoming greater attention. If we call the first generation SiP integration as “SiP1.0”, what is “SiP2.0” ? When and how is it practical? Each panelists will give their anticipation of future SiP, or “SiP2.0”. This panel talk is not an “A vs. B” type of debate, but more like an evening talk where each panelist presents their visions on the next generation SiP.
Keywords
Chip scale packaging; Circuits; National electric code; Radio frequency; Silicon; Stacking; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location
Fukuoka, Japan
Print_ISBN
978-1-4244-2604-1
Electronic_ISBN
978-1-4244-2605-8
Type
conf
DOI
10.1109/ASSCC.2008.4708832
Filename
4708832
Link To Document