Ion microprobe analysis of acceptor-doped II-VI compounds

Author

Sato, F. ; Kagawa, T. ; Yodo, Y. ; Iida, T.

Author_Institution

Dept. of Electron., Osaka Univ., Japan

Volume

5

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

3527

Abstract

Ion microprobe analysis for acceptor doped II-VI compounds was performed. Samples of ZnSe and CdTe with Ag acceptors in the shallow depth were obtained by the laser processing. The ion beam induced luminescence spectrum of the Ag doped ZnSe sample had a peak, which was concerned with the acceptors and the formation of donors. The image of the ion beam induced charge for Ag doped CdTe crystal sample showed uneven profile, which might be due to the unevenness of laser irradiation effects. Further discussions on the amorphization are needed.

Keywords

II-VI semiconductors; amorphisation; cadmium compounds; ion microprobe analysis; laser beam effects; luminescence; silver; zinc compounds; Ag acceptors; CdTe:Ag; ZnSe:Ag; acceptor-doped II-VI compounds; amorphization; ion beam induced charge; ion beam induced luminescence spectrum; ion microprobe analysis; laser irradiation effects; laser processing; shallow depth; Focusing; Ion beams; Laser beams; Luminescence; Optical materials; Radiation detectors; Semiconductor lasers; Space vector pulse width modulation; Wideband; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352671

Filename

1352671