Title :
Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques
Author :
Lüpke, G. ; Wolter, F. ; Emmerichs, U. ; Meyer, C. ; Kurz, H. ; Yasuda, T. ; Lucovsky, G. ; Bjorkman, C.H.
Author_Institution :
Inst. of Semicond. Electron. II, Rheinisch-Westfalische Tech. Hochschule, Aachen, Germany
Abstract :
We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO2 interface changes after rapid thermal annealing (RTA)
Keywords :
optical harmonic generation; rapid thermal annealing; silicon; silicon compounds; stress relaxation; Si; Si-SiO2; Si/SiO2 interface; annealing temperatures; azimuthal anisotropy; nonlinear optical response; optical second-harmonic measurements; rapid thermal annealing; silicon dioxide; sum-frequency measurements; surface nonlinear-optical techniques; thermally grown oxide film; thermally induced stress relaxation; vicinal Si(111); vicinal Si(111)-interfaces; Geometrical optics; Nonlinear optics; Optical films; Optical pulse generation; Power generation; Pulse amplifiers; Rapid thermal annealing; Silicon compounds; Temperature; Thermal stresses;
Conference_Titel :
Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1473-5
DOI :
10.1109/NLO.1994.470884
