Title :
A practical method for extracting impurity profiles and effective mobilities of MOSFET´s with nonuniform channel doping
Author :
Kubota, Katsuhiko ; Kawashima, Yasuhiko ; Ohkura, Yasuyuki ; Nagao, Masaki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<>
Keywords :
doping profiles; insulated gate field effect transistors; Gaussians; HF C-V measurements; MOSFET characterisation; aspect ratio; effective mobilities extraction; field effects; impurity profiles extraction; measured C-V profiles; nonuniform channel doping; numerical analysis; optimum fits; practical MOSFETs; profiling of channel impurity concentration; rectangular capacitor; reducing series resistance; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Electrical resistance measurement; Frequency measurement; Gaussian channels; Impurities; MOSFETs; Surface resistance; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/ICMTS.1990.67872
