Surface structure analysis and measurement of thick oxide self-aligned silicon avalanche electron emission device

Author

Guo, Meijuan

Author_Institution

Inst. of Manuf. Process. Eng., Zhejiang Univ., Hangzhou, China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

485

Lastpage

487

Abstract

The surface topology of silicon self-aligned avalanche electron emission device, which is based on LOCOS technology, has been studied. The “bird beak” structure of LOCOS offers a smooth surface with gentle slope and without obvious steps. DEKTAK 3 surface analyser and Tunnelscope 2400 STM are used to determine and analyse device surface structure. The testing results are agreed with simulation results and device I-V characteristics shows a better result than that of the tranditional structure of the silicon avalanche cathode (SAC)

Keywords

avalanche breakdown; electron field emission; elemental semiconductors; isolation technology; scanning tunnelling microscopy; silicon; surface structure; vacuum microelectronics; DEKTAK 3 surface analyser; LOCOS technology; Si; Tunnelscope 2400 STM; avalanche electron emission device; bird beak structure; device I-V characteristics; measurement; self-aligned device; surface structure analysis; surface topology; thick oxide; Cathodes; Diodes; Electron emission; Fabrication; Microelectronics; Silicon; Surface structures; Thickness measurement; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503326

Filename

503326