Title :
Prototype of Compton camera using high resolution Si/CdTe detectors Si/CdTe Compton camera as a polarimeter
Author :
Mitani, Takefumi ; Tanaka, Takaaki ; Nakazawa, Kazuhiro ; Takahashi, Tadayuki ; Takashima, Takeshi ; Tajima, Hiroyasu ; Nakamura, Hidehito ; Nomachi, Masaharu ; Nakamoto, Tatsuya ; Fukazawa, Yasushi
Author_Institution :
Japan Aerosp. Exploration Agency, Inst. of Space & Astron. Sci., Kanagawa, Japan
Abstract :
To bring a breakthrough in the observation of the gamma-ray universe, we are working on the development of Semiconductor Multi-Compton Telescope(SMCT). In the SMCT, all the energy, positional and timing resolution must be high to ensure high sensitivity. The imaging device based on the high resolution CdTe diode and Si, such as CdTe pixel detectors and Double-sided Si Strip Detectors (DSSDs), are promising candidates for the components of the SMCT. Here we report the results of a CdTe pixel detector connected with a low noise analog ASIC. We obtained an energy resolution of 2.5 keV(FWHM) at 122 keV, with a positional resolution of 2 mm. Performance of the first prototype Compton Camera using a DSSD and two CdTe pixel detectors is also described. We irradiated 100% linearly polarised 170 keV γ-ray line to the system and obtained the polarimetric modulation factor of 43%.
Keywords :
astronomical telescopes; cameras; gamma-ray detection; image sensors; polarimeters; position sensitive particle detectors; semiconductor device noise; silicon radiation detectors; ASIC; CdTe Compton camera; CdTe pixel detectors; DSSD; SMCT; double-sided Si strip detectors; energy resolution; gamma-ray universe observation; high resolution Si/CdTe detectors; imaging device; irradiated linearly polarised gamma-ray line; noise analog; polarimeter; polarimetric modulation factor; positional resolution; semiconductor multiCompton telescope; sensitivity; timing resolution; Cameras; Decision support systems; Detectors; Energy resolution; High-resolution imaging; Image resolution; Optical imaging; Prototypes; Semiconductor diodes; Timing;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352685