Title :
Simple analytical charge control model for multichannel GaAs/AlGaAs based high electron mobility transistors (HEMT)
Author :
Nawaz, M. ; Jensen, Geir U.
Author_Institution :
Centre for Technol., Kjeller, Norway
Abstract :
An analytical model is desirable because it provides faster response and good physical insight into microwave device operation. We present an analytical charge control model based on GaAs/AlGaAs multiple quantum well HEMTs. Good agreement is demonstrated with both numerical calculations and experimental data
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor quantum wells; GaAs-AlGaAs; analytical charge control model; microwave device operation; multichannel HEMTs; multiple quantum well devices; numerical calculations; Analytical models; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Millimeter wave technology; Poisson equations; Sheet materials; Telecommunication control; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503334
