DocumentCode
1835139
Title
Simple analytical charge control model for multichannel GaAs/AlGaAs based high electron mobility transistors (HEMT)
Author
Nawaz, M. ; Jensen, Geir U.
Author_Institution
Centre for Technol., Kjeller, Norway
fYear
1995
fDate
24-28 Oct 1995
Firstpage
512
Lastpage
514
Abstract
An analytical model is desirable because it provides faster response and good physical insight into microwave device operation. We present an analytical charge control model based on GaAs/AlGaAs multiple quantum well HEMTs. Good agreement is demonstrated with both numerical calculations and experimental data
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor quantum wells; GaAs-AlGaAs; analytical charge control model; microwave device operation; multichannel HEMTs; multiple quantum well devices; numerical calculations; Analytical models; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Millimeter wave technology; Poisson equations; Sheet materials; Telecommunication control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503334
Filename
503334
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