Title :
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
Author :
Guo, J.D. ; Feng, M.S. ; Pan, F.M.
Author_Institution :
Inst. of Electron. Eng., Nat. Chio Tung Univ., Taipei, Taiwan
Abstract :
The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN does not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because the interactions between the metal and the semiconductor dominate the Schottky behavior
Keywords :
III-V semiconductors; Schottky barriers; characteristics measurement; chemical vapour deposition; gallium compounds; thermal stability; work function; 1.2 eV; 4.26 eV; C-V methods; GaN-Au; GaN-Ni; GaN-Pd; GaN-Pt; GaN-Ti; J-T methods; LP-MOCVD; Schottky barriers; contact thermal stability; metal work function; semiconductor-metal interactions; Capacitance-voltage characteristics; Gallium nitride; Gold; Hydrogen; III-V semiconductor materials; Laboratories; Light emitting diodes; Materials science and technology; Schottky barriers; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503335
