Study of Schottky barriers on n-type GaN grown by LP-MOCVD

Author

Guo, J.D. ; Feng, M.S. ; Pan, F.M.

Author_Institution

Inst. of Electron. Eng., Nat. Chio Tung Univ., Taipei, Taiwan

fYear

1995

fDate

24-28 Oct 1995

Firstpage

515

Lastpage

517

Abstract

The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN does not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because the interactions between the metal and the semiconductor dominate the Schottky behavior

Keywords

III-V semiconductors; Schottky barriers; characteristics measurement; chemical vapour deposition; gallium compounds; thermal stability; work function; 1.2 eV; 4.26 eV; C-V methods; GaN-Au; GaN-Ni; GaN-Pd; GaN-Pt; GaN-Ti; J-T methods; LP-MOCVD; Schottky barriers; contact thermal stability; metal work function; semiconductor-metal interactions; Capacitance-voltage characteristics; Gallium nitride; Gold; Hydrogen; III-V semiconductor materials; Laboratories; Light emitting diodes; Materials science and technology; Schottky barriers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503335

Filename

503335