Title :
A prospective design methodology of MMIC 2–6 GHz low noise amplifier
Author :
Kumar, Chanchal ; Wekhande, Renuka
Author_Institution :
Electron. & Telecommun. Dept., SharadChandra Pawar Coll. of Eng., Pune, India
Abstract :
A wideband low noise amplifier is suitable for an emerging architecture such as a SDR and Digital RF. The gallium arsenide process has an advantage of very low noise figure at very high frequency. In this article we have taken efforts to propose a new concept for a wideband highly linear low noise amplifier. The simulations are carried out using Agilent Advanced Design System ADS to analyze the behavior of LNA in 2GHz to 6GHz band. The simulated results have shown an acceptable behavior with a maximum gain of 31 dB and low NF.
Keywords :
MMIC amplifiers; UHF amplifiers; gallium arsenide; integrated circuit design; wideband amplifiers; Agilent Advanced Design System; GaAs; MMIC low noise amplifier; frequency 2 GHz to 6 GHz; gain 31 dB; wideband low noise amplifier; CMOS integrated circuits; Gain; Impedance matching; Low-noise amplifiers; Noise; Radio frequency; Wideband; GaAs; LNA; MMIC; RF; SDR; Wideband;
Conference_Titel :
Power, Automation and Communication (INPAC), 2014 International Conference on
Conference_Location :
Amravati
Print_ISBN :
978-1-4799-7168-8
DOI :
10.1109/INPAC.2014.6981141
