Title :
A comparison between GaAs and CdTe for X-ray detection
Author :
Sun, G.C. ; Samic, H. ; Bougoin, J.C. ; Chambellan, D. ; Gal, O. ; Pillot, Ph.
Author_Institution :
Lab. des Milieux Desordonnes et Heterogenes, Univ. Pierre et Marie Curie, Paris, France
Abstract :
We have grown 4 inches GaAs epitaxial layers of thickness ranging from 100 to 600 μm. With such layers we made pixel X-ray detectors where each pixel is a p+/i/n+ mesa structure in which the grown layer is the i region. The aim of this communication is to describe, prior to the evaluation of an image, the performances of such a detector in terms of homogeneity, reverse dark current, linearity, response time, dynamic range and charge collection efficiency. We shall also describe how the current induced by 100 kV X-ray in a detector made of a 115 μm thick GaAs layer compares with that produced in the same conditions by a mm thick CdTe detector.
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray detection; cadmium alloys; dark conductivity; gallium arsenide; position sensitive particle detectors; semiconductor counters; semiconductor epitaxial layers; tellurium alloys; 100 V; 100 to 600 mum; 115 mum; 4 in; CdTe; CdTe detector; GaAs; GaAs epitaxial layers; X-ray detection; charge collection efficiency; dynamic range; homogeneity; linearity; p+/i/n+ mesa structure; pixel X-ray detectors; response time; reverse dark current; Dark current; Delay; Dynamic range; Epitaxial layers; Gallium arsenide; Linearity; Performance evaluation; X-ray detection; X-ray detectors; X-ray imaging;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352689
