Effect of deep levels on the photo-sensitivity in GaAs substrate and MESFET device

Author

HU, Kaisheng ; Xiaobing Guo ; ZHOU, O. Zhiiiui ; ZHANG, Mian ; LI, Guangpin ; He, Xiukun

Author_Institution

Tianjin Electron. Mater. Inst., China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

521

Lastpage

523

Abstract

Deep levels in SI-GaAs substrate, ion implantation layer and MESFET device have been investigated by photo-stimulated current measurement system (PSCS) using illumination in range of 700 nm to 3500 nm. It shows that there exists an absorption peak (1.42) and 1.20, 0.70, 0.48 eV deep levels in both SI-GaAs substrate, ion implantation layer and MESFET device. These deep levels have effect on the photosensitivity of the devices. These deep levels perhaps originate from SI-GaAs substrate which also has these levels. The way to decrease the photosensitivity in the device is discussed according to the result

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; ion implantation; photoconductivity; 0.48 to 1.42 eV; 700 to 3500 nm; GaAs; MESFET device; absorption peak; deep levels; ion implantation layer; photosensitivity; photostimulated current measurement system; Annealing; Current measurement; Electronics industry; Gallium arsenide; Helium; Industrial electronics; Lighting; MESFETs; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503337

Filename

503337