The total dose radiation characteristics of short channel CMOS/SIMOX devices

Author

Zhang, Xing ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Beijing Univ., China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

541

Lastpage

543

Abstract

This paper discusses the total dose radiation characteristics of 1.0 μm SIMOX MOSFETs and CMOS/SIMOX ring oscillators. The thin film SIMOX MOSFETs show good radiation characteristics. The radiation induced threshold voltage shifts are less than 1.0 V when the irradiation doses are 3×10⁵ rad(Si) and 7×10⁵ rad(Si) for N- and P-MOSFET, respectively. The ring oscillator can operate well after irradiation by 5×10⁵ rad(Si) γ rays. Its propagation delay is 38% higher than that of pre-irradiation ring oscillators. The radiation tolerance of PMOSFET is better than that of NMOSFET. The radiation induced leakage of NMOSFET is mainly caused by the parasitic back-channel transistor

Keywords

CMOS integrated circuits; MOSFET; SIMOX; gamma-ray effects; integrated circuit measurement; ion implantation; radiation hardening (electronics); γ ray irradiation; 1 mum; 3E5 to 7E5 rad; CMOS/SIMOX ring oscillators; NMOSFET; PMOSFET; SIMOX MOSFETs; parasitic back-channel transistor; propagation delay; radiation induced leakage; radiation induced threshold voltage shifts; radiation tolerance; short channel CMOS/SIMOX devices; total dose radiation characteristics; Annealing; CMOS technology; MOSFET circuits; Microelectronics; Propagation delay; Ring oscillators; Silicon; Substrates; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503344

Filename

503344