DocumentCode :
1835374
Title :
On-Wafer Power Measurements
Author :
Dawson, Dale E. ; Salib, Mike L.
Author_Institution :
P. 0. Box 1521, MS 3Kll, Westinghouse Electric Corporation, Baltimore, MD 21203
Volume :
16
fYear :
1989
fDate :
Nov. 30 1989-Dec. 1 1989
Firstpage :
77
Lastpage :
85
Abstract :
Wafer maps of output power have been obtained at the 2 watt level by onwafer probing. to prevent chip burn out, and the measurement accuracy. This paper describes the probing technique, what has been done to prevent chip burn out, and the measurement accuracy.
Keywords :
Electric breakdown; FETs; Gold; MMICs; Measurement standards; Power measurement; Power supplies; Probes; Q measurement; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Winter, 34th
Conference_Location :
Ft. Lauderdale, FL, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1989.323959
Filename :
4119527
Link To Document :
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