• DocumentCode
    1835387
  • Title

    Effects of strain on the electron mobility in SOI Si-MOSFET

  • Author

    Li, Binghui ; Han, Ruqi ; Wang, Yangyum

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    544
  • Lastpage
    546
  • Abstract
    There are several reports on the enhancement of low field electron mobility in SOI thin-film fully depleted Si-MOSFETs. This behavior is attributed to channel inversion layer broadening and reduced SiO2 /Si interface scattering with the reduction of transverse electric field in SOI MOSFETs. In this short paper, the tensile strain existing in the surface Si layer of SOI structures and its effects on the mobility behavior of SOI n-MOSFETs are discussed
  • Keywords
    MOSFET; conduction bands; electron mobility; internal stresses; inversion layers; silicon-on-insulator; SOI n-MOSFETs; SOI thin-film fully depleted Si-MOSFETs; Si; SiO2-Si; channel inversion layer broadening; conduction band edges; low field electron mobility; reduced SiO2/Si interface scattering; strain splitting; surface Si layer; tensile strain effect; transverse electric field reduction; Capacitive sensors; Effective mass; Electron mobility; MOSFET circuits; Microelectronics; Shape; Strain measurement; Substrates; Tensile strain; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503345
  • Filename
    503345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835387