Title :
Effects of strain on the electron mobility in SOI Si-MOSFET
Author :
Li, Binghui ; Han, Ruqi ; Wang, Yangyum
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
There are several reports on the enhancement of low field electron mobility in SOI thin-film fully depleted Si-MOSFETs. This behavior is attributed to channel inversion layer broadening and reduced SiO2 /Si interface scattering with the reduction of transverse electric field in SOI MOSFETs. In this short paper, the tensile strain existing in the surface Si layer of SOI structures and its effects on the mobility behavior of SOI n-MOSFETs are discussed
Keywords :
MOSFET; conduction bands; electron mobility; internal stresses; inversion layers; silicon-on-insulator; SOI n-MOSFETs; SOI thin-film fully depleted Si-MOSFETs; Si; SiO2-Si; channel inversion layer broadening; conduction band edges; low field electron mobility; reduced SiO2/Si interface scattering; strain splitting; surface Si layer; tensile strain effect; transverse electric field reduction; Capacitive sensors; Effective mass; Electron mobility; MOSFET circuits; Microelectronics; Shape; Strain measurement; Substrates; Tensile strain; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503345
