Title :
A study of the interface phenomena of TiW/Si and TiN/Ti/Si
Author :
Kim, Eungsoo ; Shim, Sangchul ; Eong, Changbum ; Lim, Soonkwon
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Kyunggi, South Korea
Abstract :
In device processing, TiW or Ti/TiN is generally used as a barrier metal. Here, we report interesting phenomena at the interface between the barrier metal and Si substrate, depending on the deposition temperature and type of barrier metal, after heat treatment at a temperature of 450°C followed by Al deposition. However, the phenomena are not observed below a heat treatment temperature of 400°C. To investigate the diffusion barrier characteristic and interface reactions between barrier metal and Si, SEM micrographs, XRD and electron spectroscopy for chemical analysis (ESCA) depth profiles are analyzed
Keywords :
X-ray diffraction; X-ray photoelectron spectra; chemical interdiffusion; diffusion barriers; heat treatment; scanning electron microscopy; semiconductor device metallisation; silicon; sputter deposition; titanium; titanium alloys; titanium compounds; tungsten alloys; 100 to 300 C; 400 C; 450 C; Al deposition; DC magnetron sputtering; ESCA depth profiles; SEM micrographs; Si; Si substrate; TiN-Ti-Si; TiN/Ti/Si; TiW-Si; TiW/Si; XRD; barrier metal; deposition temperature; diffusion barrier characteristic; heat treatment temperature; interface reactions; Annealing; Artificial intelligence; Atomic layer deposition; Interface phenomena; Semiconductor films; Shape; Sputtering; Temperature; Tin; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503347
