Title :
Growth and properties of FeSi2 by MEVVA implantation and RTA
Author :
Qian, Weidong ; Zhang, Tonghe ; Liang, Hong
Author_Institution :
Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
Abstract :
Fe silicides are fabricated using MEVVA Fe ion implantation into P-Si with different ion flux Φ. The relation of sheet resistance R □ with annealing temperature Ta is obtained using a four-point probe. It is found that R□ decreases rapidly with increasing Φ and Ta. XRD analysis shows that the semiconductor phase β-FeSi2 is formed for as-implanted samples and post annealed samples in the temperature range from 800°C to 1000°C. It is proved that there is a phase transition from β-FeSi2 (semiconducting) to α-FeSi2 (metallic) after the samples are annealed at 1100°C for 10 s
Keywords :
X-ray diffraction; electric resistance; integrated circuit interconnections; ion implantation; iron compounds; metal-insulator transition; rapid thermal annealing; α-FeSi2; β-FeSi2; 10 s; 1100 C; 800 to 1000 C; Fe silicides; FeSi2; MEVVA Fe ion implantation; RTA; Si:Fe; XRD analysis; annealing temperature; four-point probe; growth; ion flux; metallic phase; phase transition; semiconductor phase; sheet resistance; Annealing; Art; Electrical resistance measurement; Iron; Lattices; Roentgenium; Silicides; Silicon; Temperature; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503348
