The study of self-aligned simultaneous formation of titanium silicide and nitride

Author

He, Jie ; Liu, Zhongchun ; Luan, Hongfa ; Liu, Litian ; Qian, Peixin

Author_Institution

Inst. of Microelectron., Qinghua Univ., Beijing, China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

556

Lastpage

558

Abstract

Copying the two-step-annealing procedure in self-aligned silicide technology, Ti/Si samples deposited under ultra-high vacuum were annealed at low temperatures, selective etched, and again annealed at high temperatures in our “RHT-6000 rapid heat treatment equipment for VLSI” with nitrogen as the protective ambient. The experimental results showed that titanium silicide and nitride were formed simultaneously in the thin film. The formation of titanium nitride was studied in detail. In addition, we studied the electrical properties of the final product TiN-TiSi₂ and its diffusion barrier function in the Al/TiN-TiSi₂/Si(n⁺p) diode structure

Keywords

contact resistance; diffusion barriers; etching; integrated circuit metallisation; nitridation; ohmic contacts; rapid thermal annealing; silicon; titanium; titanium compounds; 15 s; 650 to 750 C; Al-TiNTiSi₂-Si; Al/TiN-TiSi₂/Si n⁺p diode structure; N₂ protective ambient; RHT-6000 rapid heat treatment equipment for VLSI; Ti-Si; Ti/Si samples; TiN; TiN-TiSi₂; TiSi₂; contact resistance; diffusion barrier function; electrical properties; high temperature annealing; low temperature annealing; nitridation reaction mechanism; selective etching; self-aligned silicide technology; sheet resistance; two-step-annealing; ultra-high vacuum deposition; Annealing; Etching; Heat treatment; Nitrogen; Protection; Silicides; Temperature; Titanium; Transistors; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503349

Filename

503349