• DocumentCode
    1835540
  • Title

    A systematic approach to a reliable neural model for pHEMT using different numbers of training data

  • Author

    Joodaki, M. ; Kompa, G.

  • Author_Institution
    Dept. of High Frequency Eng., Kassel Univ., Germany
  • Volume
    2
  • fYear
    2002
  • fDate
    2-7 June 2002
  • Firstpage
    1105
  • Abstract
    A systematic approach is presented to achieve a reliable neural model for microwave active devices with different numbers of training data. The method is implemented for a small-signal bias depended modeling of pHEMT with different numbers of training data. The errors for different numbers of training data have been compared to each other and show that by using this method a reliable model is achievable even though the number of training data is considerably small. The method aims at constructing a model which can satisfy the criteria of minimum training error, maximum smoothness (to avoid the problem of overfitting), and simplest network structure.
  • Keywords
    electronic engineering computing; high electron mobility transistors; learning (artificial intelligence); microwave field effect transistors; neural nets; semiconductor device models; PHEMT; microwave active device; neural model; small-signal model; training data; Artificial neural networks; Data engineering; Frequency; Multi-layer neural network; Neural networks; PHEMTs; Predictive models; Training data; US Department of Energy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2002 IEEE MTT-S International
  • Conference_Location
    Seattle, WA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7239-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.2002.1011840
  • Filename
    1011840