Title :
ECR hydrogen plasma treatment of Si: defect activation under thermal anneal
Author :
Nam, C.W. ; Ashok, S.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Si wafers subjected to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ECR) plasma system have been annealed subsequently in the temperature range 300-750°C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C
Keywords :
annealing; deep level transient spectroscopy; elemental semiconductors; plasma applications; silicon; surface cleaning; 20 min; 300 to 750 C; 4 to 12 min; ECR plasma treatment; H; Si wafers; Si:B; Si:P; anneal temperature; deep level concentrations; deep level transient spectroscopy; defect activation; electron cyclotron resonance plasma system; hydrogenation; low-temperature atomic H cleaning; majority carrier trap levels; short time cleaning; thermal anneal; Annealing; Atomic measurements; Cleaning; Cyclotrons; Electrons; Hydrogen; Plasma measurements; Plasma temperature; Resonance; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503352
