• DocumentCode
    1835598
  • Title

    Study of the heavy metal gettering effect of porous silicon on SOI structure

  • Author

    Wang, X.H. ; Huang, Y.P. ; Bao, Z.M. ; Tang, T.A. ; Li, A.Z. ; Zou, S.X.

  • Author_Institution
    Dept. of Electr. Eng., Fudan Univ., Shanghai, China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    571
  • Lastpage
    573
  • Abstract
    Gettering of copper and nickel in FIPOS SOI structures has been investigated using XTEM and SIMS for the first time in this paper. A transition region with dendrite porous oxidized Si exists at the interface between the Si oxidized porous layer (PS) and the substrate Si. This transition region may provide effective gettering sites for Cu and Ni which can diffuse from the top Si layer to the substrate during the SOI formation. In addition, Cu segregates to the transition region more readily
  • Keywords
    elemental semiconductors; getters; porous materials; secondary ion mass spectra; silicon; silicon-on-insulator; transmission electron microscopy; FIPOS SOI structure; SIMS; Si:Cu,Ni-SiO2; XTEM; dendrite oxidized porous silicon; diffusion; heavy metal gettering; interfacial transition region; segregation; Annealing; Contamination; Copper; Doping; Etching; Gettering; Impurities; Nickel; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503354
  • Filename
    503354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835598