Title :
ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR
Author :
Ker, Ming Dou ; Lin, Chun Yu ; Meng, Guo Xuan
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab. Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.
Keywords :
CMOS digital integrated circuits; UHF power amplifiers; electrostatic discharge; silicon; solid-state rectifiers; Si; electrostatic discharge; fully integrated CMOS RF power amplifiers; on-chip ESD protection design; radio-frequency circuits; silicon-controlled rectifier; ultrawideband power amplifier; waffle-structured SCR; Circuits; Electrostatic discharge; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Rectifiers; Stress; Thyristors; Ultra wideband technology;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541662