• DocumentCode
    1835615
  • Title

    ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

  • Author

    Ker, Ming Dou ; Lin, Chun Yu ; Meng, Guo Xuan

  • Author_Institution
    Nanoelectron. & Gigascale Syst. Lab. Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    1292
  • Lastpage
    1295
  • Abstract
    Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.
  • Keywords
    CMOS digital integrated circuits; UHF power amplifiers; electrostatic discharge; silicon; solid-state rectifiers; Si; electrostatic discharge; fully integrated CMOS RF power amplifiers; on-chip ESD protection design; radio-frequency circuits; silicon-controlled rectifier; ultrawideband power amplifier; waffle-structured SCR; Circuits; Electrostatic discharge; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Rectifiers; Stress; Thyristors; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541662
  • Filename
    4541662