Title :
Trap kinetics in metal-oxide-semiconductor structures at high electric field
Author :
Xiaowei, Liu ; Mingzhen, Xu ; Changhua, Tax ; Wang Yangyuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
In this report, we will present our new results on trap kinetics in metal-oxide-semiconductor (simply called MOS) structures under high electric field stressing. A unified formula is obtained to describe the generating, trapping, and detrapping processes of traps. Based on these results we set up a series of novel methods for the purpose of analyzing the dynamic characteristics of various traps at the same time
Keywords :
MIS devices; MIS structures; electron traps; high field effects; MOS structure; dynamic characteristics; high electric field stressing; trap kinetics; Cause effect analysis; Character generation; Differential equations; Electron traps; Kinetic theory; MOS devices; Spectroscopy; Stress; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503356
