• DocumentCode
    1835648
  • Title

    Reduction of secondary defects and diffusion of B atoms in BF2 -implanted Si(100) by ion-beam defect engineering

  • Author

    Zhao, Qing-Tai ; Wang, Zhong-Lie

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    580
  • Lastpage
    582
  • Abstract
    The effects of ion beam defect engineering (IBDE) in BF2-implanted silicon have been studied. It has been shown that IBDE technique may be useful in the improvement of the properties of BF2 implanted silicon. Reduction of secondary defects in BF2 doped region and the anomalous diffusion of B atoms was observed if a buried amorphous layer was introduced by MeV Si ion irradiation prior to annealing
  • Keywords
    annealing; boron compounds; buried layers; diffusion; elemental semiconductors; ion beam effects; ion implantation; semiconductor doping; silicon; B diffusion; BF2-implanted Si(100); Si:BF2; annealing; buried amorphous layer; ion-beam defect engineering; secondary defects; Amorphous materials; Annealing; Atomic beams; Atomic layer deposition; Fabrication; Ion beams; Microelectronics; Silicon; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503357
  • Filename
    503357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835648