Title :
Reduction of secondary defects and diffusion of B atoms in BF2 -implanted Si(100) by ion-beam defect engineering
Author :
Zhao, Qing-Tai ; Wang, Zhong-Lie
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
The effects of ion beam defect engineering (IBDE) in BF2-implanted silicon have been studied. It has been shown that IBDE technique may be useful in the improvement of the properties of BF2 implanted silicon. Reduction of secondary defects in BF2 doped region and the anomalous diffusion of B atoms was observed if a buried amorphous layer was introduced by MeV Si ion irradiation prior to annealing
Keywords :
annealing; boron compounds; buried layers; diffusion; elemental semiconductors; ion beam effects; ion implantation; semiconductor doping; silicon; B diffusion; BF2-implanted Si(100); Si:BF2; annealing; buried amorphous layer; ion-beam defect engineering; secondary defects; Amorphous materials; Annealing; Atomic beams; Atomic layer deposition; Fabrication; Ion beams; Microelectronics; Silicon; Temperature; US Department of Transportation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503357
