DocumentCode
1835668
Title
Rapid thermal annihilation of microdefects in CZ Si crystals
Author
Hongfa Luan ; Yang Xia ; Guohu Zhang ; Fu Qin
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear
1995
fDate
24-28 Oct 1995
Firstpage
583
Lastpage
585
Abstract
Rapid thermal annihilation of microdefects in CZ Si crystals has been studied. The microdefects can be effectively annihilated by RTA for 5~60 sec. at temperature over the range of 900~1200°C. The annihilation of microdefects is not dependent on annealing duration. The concentration of the interstitial oxygen impurities is remarkably increased with microdefect annihilation. It is concluded that the microdefects are involved during RTA process. It is believed that the thermal stress at microdefects induced by RTA is the main cause of microdefect annihilation
Keywords
crystal defects; elemental semiconductors; rapid thermal annealing; silicon; 5 to 60 sec; 900 to 1200 C; CZ Si crystal; Si; interstitial oxygen impurities; microdefect annihilation; rapid thermal annealing; thermal stress; Crystals; Etching; Impurities; Microelectronics; Rapid thermal annealing; Silicon; Surfaces; Temperature distribution; Thermal stresses; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503358
Filename
503358
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