Title :
Inhibition of neutron irradiation on oxidation stacking faults in the surface of Si wafer
Author :
Li, Yangxian ; Ju, Yulin ; Liu, Caichi ; Xu, Yuesheng ; Wang, Hongmei ; Junzhong Cao
Author_Institution :
Mater. Res. Center, Hebei Inst. of Technol., Tianjin, China
Abstract :
The generation of stacking faults (SF) during thermal oxidation of Czochralski Si (CZSi) were investigated. It showed that oxidation induced stacking faults (OSF) have been retarded seriously in neutron irradiated Si. The studies we have performed suggest that the inhibition on OSF results from the interaction of neutron irradiated defects with oxygen in Si
Keywords :
elemental semiconductors; neutron effects; oxidation; silicon; stacking faults; Czochralski silicon wafer surface; Si; defects; neutron irradiation; oxidation stacking faults; thermal oxidation; Annealing; Atmosphere; Circuits; Conductivity; Etching; Fabrication; Impurities; Neutrons; Oxidation; Stacking;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503359
