DocumentCode
1835681
Title
Inhibition of neutron irradiation on oxidation stacking faults in the surface of Si wafer
Author
Li, Yangxian ; Ju, Yulin ; Liu, Caichi ; Xu, Yuesheng ; Wang, Hongmei ; Junzhong Cao
Author_Institution
Mater. Res. Center, Hebei Inst. of Technol., Tianjin, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
586
Lastpage
588
Abstract
The generation of stacking faults (SF) during thermal oxidation of Czochralski Si (CZSi) were investigated. It showed that oxidation induced stacking faults (OSF) have been retarded seriously in neutron irradiated Si. The studies we have performed suggest that the inhibition on OSF results from the interaction of neutron irradiated defects with oxygen in Si
Keywords
elemental semiconductors; neutron effects; oxidation; silicon; stacking faults; Czochralski silicon wafer surface; Si; defects; neutron irradiation; oxidation stacking faults; thermal oxidation; Annealing; Atmosphere; Circuits; Conductivity; Etching; Fabrication; Impurities; Neutrons; Oxidation; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503359
Filename
503359
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