• DocumentCode
    1835744
  • Title

    Analytical model of collector current density and base transit time

  • Author

    Ma, Pingxi ; Lichun Zhang ; Wang, Yangyuan

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    595
  • Lastpage
    597
  • Abstract
    Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage VBE⩽1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid
  • Keywords
    bipolar transistors; iterative methods; minority carriers; semiconductor device models; analytical model; base transit time; bipolar transistor; collector current density; injected minority carrier profile; iteration method; Analytical models; Bipolar transistors; Current density; Doping profiles; Electrons; Kirk field collapse effect; Microelectronics; Modems; Semiconductor process modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503362
  • Filename
    503362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835744