DocumentCode :
1835744
Title :
Analytical model of collector current density and base transit time
Author :
Ma, Pingxi ; Lichun Zhang ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
fYear :
1995
fDate :
24-28 Oct 1995
Firstpage :
595
Lastpage :
597
Abstract :
Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage VBE⩽1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid
Keywords :
bipolar transistors; iterative methods; minority carriers; semiconductor device models; analytical model; base transit time; bipolar transistor; collector current density; injected minority carrier profile; iteration method; Analytical models; Bipolar transistors; Current density; Doping profiles; Electrons; Kirk field collapse effect; Microelectronics; Modems; Semiconductor process modeling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.503362
Filename :
503362
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1835744
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