• DocumentCode
    1835762
  • Title

    Analytical model of the kink effect related to interface traps in In0.52Al0.48As/InxGa1-xAs MODFETs (x>0.53)

  • Author

    Zhang, Yimen ; Wu, Yongjun ; Zhang, Yuming

  • Author_Institution
    Microelectron. Inst., Xidian Univ., Xi´´an, China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    598
  • Lastpage
    600
  • Abstract
    A new analytical model is derived for the kink effect in strained and unstrained InAlAs/InGaAs MODFET´s. The influence of heterointerface traps on the kink effect in MODFET´s is considered by the change of threshold voltage. The origin of the kink effect in MODFET´s is analyzed carefully, and the influence of strain is discussed
  • Keywords
    III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor device models; In0.52Al0.48As-InGaAs; In0.52Al0.48As/InxGa1-x As MODFET; analytical model; interface traps; kink effect; strain; threshold voltage; Analytical models; Capacitive sensors; Electron traps; Equations; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; MODFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503363
  • Filename
    503363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835762