Title :
Analytical model of the kink effect related to interface traps in In0.52Al0.48As/InxGa1-xAs MODFETs (x>0.53)
Author :
Zhang, Yimen ; Wu, Yongjun ; Zhang, Yuming
Author_Institution :
Microelectron. Inst., Xidian Univ., Xi´´an, China
Abstract :
A new analytical model is derived for the kink effect in strained and unstrained InAlAs/InGaAs MODFET´s. The influence of heterointerface traps on the kink effect in MODFET´s is considered by the change of threshold voltage. The origin of the kink effect in MODFET´s is analyzed carefully, and the influence of strain is discussed
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor device models; In0.52Al0.48As-InGaAs; In0.52Al0.48As/InxGa1-x As MODFET; analytical model; interface traps; kink effect; strain; threshold voltage; Analytical models; Capacitive sensors; Electron traps; Equations; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; MODFETs; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503363
