Tantalum silicide sputtering target material for amorphous Ta-Si-N diffusion barrier for Cu metallization

Author

Ivanov, Eugene

Author_Institution

Tosoh SMD Inc., Grove City, OH, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

256

Lastpage

258

Abstract

Amorphous Ta-Si-N films of about 500 nm thickness were reactively sputter deposited on Si substrates using DC magnetron sputtering from TaSi_0.1, TaSi_0.4 and TaSi_0.6 targets. The film properties were characterized by sheet resistance measurement and X-ray diffraction. With increasing amounts of nitrogen in the sputtering gas, the film resistivity increased. Surface erosion of the multiphase target material was analyzed by SEM. Particulate emission is minimized with increasing density and refined microstructure of the target material

Keywords

X-ray diffraction; chemical interdiffusion; copper; diffusion barriers; electric resistance; integrated circuit interconnections; integrated circuit metallisation; scanning electron microscopy; sputter deposition; tantalum compounds; wear; 500 nm; Cu metallization; Cu-TaSiN; DC magnetron sputtering; SEM; TaSi_0.1; TaSi_0.1 target; TaSi_0.4; TaSi_0.4 target; TaSi_0.6; TaSi_0.6 target; X-ray diffraction; amorphous Ta-Si-N diffusion barrier; amorphous Ta-Si-N films; film properties; film resistivity; multiphase target material; nitrogen sputtering gas content; particulate emission; reactive sputter deposition; sheet resistance measurement; surface erosion; tantalum silicide sputtering target material; target material density; target material microstructure; Amorphous magnetic materials; Amorphous materials; Electrical resistance measurement; Magnetic materials; Semiconductor films; Sheet materials; Silicides; Sputtering; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704915

Filename

704915